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Typical Characteristics
10
10
1
Top :
V GS
15.0 V
1
10.0 V
8.0 V
7.0 V
6.5 V
10
150 C
10
25 C
0
6.0 V
Bottom : 5.5 V
0
o
o
10
-55 C
-1
※ Notes :
1. 250 μ s Pulse Test
2. T C = 25 ℃
o
※ Notes :
1. V DS = 50V
2. 250 μ s Pulse Test
10
10
10
10
10
-2
-1
0
1
-1
2
4
6
8
10
10
5
V DS , Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
1
V GS , Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
10
4
3
V GS = 10V
V GS = 20V
0
2
※ Note : T J = 25 ℃
150 ℃
25 ℃
※ Notes :
1. V GS = 0V
2. 250 μ s Pulse Test
10
1
0
3
6
9
12
15
18
-1
0.2
0.4
0.6
0.8
1.0
1.2
I D , Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
V SD , Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2200
2000
1800
1600
1400
1200
1000
800
600
C iss
C oss
C rss
C iss = C gs + C gd (C ds = shorted)
C oss = C ds + C gd
C rss = C gd
※ Notes :
1. V GS = 0 V
2. f = 1 MHz
12
10
8
6
4
V DS = 180V
V DS = 450V
V DS = 720V
400
200
2
※ Note : I D = 5.4 A
10
10
10
0
-1
0
1
0
0
5
10
15
20
25
30
35
V DS , Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
Q G , Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
?2000 Fairchild Semiconductor Corporation
FQPF5N90 Rev. C1
3
www.fairchildsemi.com